DS28DG02: 2Kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
Reading from PIO
When reading from PIOs, as shown in Figure 23, the sampling is triggered by the same edge that the master uses
to clock in (read) the last data (LS) bit of the preceding byte, which may be PIO data or SRAM data. To be correctly
assessed, the PIO state must not changed during the t PS and t PH interval. The SO state is valid t V after the falling
edge of SCL. When reading from address 126h, the PIO state appearing first on SO is that of PIO7. With every
falling edge on SCK the next PIO state appears on SO. On the rising SCK edge after the state of PIO0 is shifted
out to SO, the PIOs of address 127h are sampled. Reading from address 127 first results in four 0-bits followed by
the state of PIO11 to PIO8. If the READ instruction is issued with starting address 126h, the DS28DG02 enters a
loop in which both groups of PIOs are read alternating between PIO0:7 and PIO8:11. This way the fastest PIO
sampling rate is f CLK / 16.
Figure 23. PIO Read-Access Timing
SCK
On this edge the master
This edge shifts the MS
reads the LS bit of the
previous PIO data byte.
PIOn
SPI Communication—Legend
Sampling
t PS
t PH
bit of the just sampled
PIO state to SO.
SYMBOL
SEL
DSEL
WREN
WRDI
WRSR
RFSH
DESCRIPTION
Falling Edge on CSZ
Rising Edge on CSZ
Write Enable Instruction
Write Disable Instruction
Write Status Register Instruction
Refresh Instruction
SYMBOL
WRITEL
WRITEH
READL
READH
<byte>
DESCRIPTION
Write Instruction with A8 = 0
Write Instruction with A8 = 1
Read Instruction with A8 = 0
Read Instruction with A8 = 1
Transfer of 1 Byte
30 of 34
相关PDF资料
DS28E04S-100+T IC EEPROM 4KBIT 16SOIC
DS28EC20+T IC EEPROM 20KBIT TO92-3
DS301X KWIK-CHG DESIGNATION STRIP SGL
DS3030W-100# IC NVSRAM 256KBIT 100NS 256BGA
DS3045W-100# IC NVSRAM 1MBIT 100NS 256BGA
DS3050W-100# IC NVSRAM 4MBIT 100NS 256BGA
DS3065W-100# IC NVSRAM 8MBIT 100NS 256BGA
DS3065WP-100IND+ IC SRAM 3.3V 8MB 34POWERCAP MOD
相关代理商/技术参数
DS28DG02EVKIT 功能描述:存储器 IC 开发工具 RoHS:否 制造商:STMicroelectronics 产品:Reference Boards 工具用于评估:M24LR64-R 存储容量:64 kbit 存储类型:EEPROM 工作电源电压:1.8 V to 5.5 V
DS28DG02G-3C+ 功能描述:电可擦除可编程只读存储器 2Kb SPI 电可擦除可编程只读存储器 w/PIO RTC/Rst/Bat Mtr/Wtdg RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS28DG02G-3C+T 功能描述:电可擦除可编程只读存储器 2Kb SPI 电可擦除可编程只读存储器 w/PIO RTC/Rst/Bat Mtr/Wtdg RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS28E01-100 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:带SHA-1引擎保护的1K位1-Wire EEPROM
DS28E01-100_12 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1Kb Protected 1-Wire EEPROM with SHA-1 Engine
DS28E01-100+ 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS28E01G-100+R 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1K-Bit Protected 1-Wire EEPROM with SHA-1 Engine
DS28E01G-100+T 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1K-Bit Protected 1-Wire EEPROM with SHA-1 Engine